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A 7-eV bandgap semiconductor based on silicon-doped α-(Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>)<sub>2</sub>O<sub>3</sub>

Nature, Published online: 07 October 2026; doi:10.1038/s41586-026-11085-3Suboxide molecular-beam epitaxy is used to grow silicon-doped α-(AlxGa1−x)2O3 films with bandgaps exceeding 7.0 eV, enabling the fabrication of a Schottky diode and a field-effect transistor with colossal-bandgap channels.

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Oct 7, 2026 - 23:00
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A 7-eV bandgap semiconductor based on silicon-doped α-(Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>)<sub>2</sub>O<sub>3</sub>

Nature, Published online: 07 October 2026; doi:10.1038/s41586-026-11085-3Suboxide molecular-beam epitaxy is used to grow silicon-doped α-(AlxGa1−x)2O3 films with bandgaps exceeding 7.0 eV, enabling the fabrication of a Schottky diode and a field-effect transistor with colossal-bandgap channels.

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