Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride
Nature, Published online: 30 September 2026; doi:10.1038/s41586-026-11047-9A dual-precursor chemical system is used to achieve wafer-scale epitaxy growth of boron carbon nitride, a high-performance p-type semiconductor, for potential integration in efficient 2D materials for electronics.
Nature, Published online: 30 September 2026; doi:10.1038/s41586-026-11047-9A dual-precursor chemical system is used to achieve wafer-scale epitaxy growth of boron carbon nitride, a high-performance p-type semiconductor, for potential integration in efficient 2D materials for electronics.
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